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NP90N04VUG-E1-AY Технические параметры

Renesas Electronics America  NP90N04VUG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 90A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 1.2W Ta 105W Tc
Turn Off Delay Time 65 ns
Operating Temperature 175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Свойство продукта Значение свойства
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.2W
Case Connection DRAIN
Turn On Delay Time 32 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 7500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
Fall Time (Typ) 11 ns
Continuous Drain Current (ID) 90A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.004Ohm
Pulsed Drain Current-Max (IDM) 300A
DS Breakdown Voltage-Min 40V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NP90N04VUG-E1-AY Документы

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