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- Transistors - IGBTs - Single
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- RJH60F0DPQ-A0#T0
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RJH60F0DPQ-A0#T0 Технические параметры
Renesas Electronics America RJH60F0DPQ-A0#T0 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Factory Lead Time | 16 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Number of Pins | 3Pins | |
| Collector-Emitter Breakdown Voltage | 600V | |
| Collector-Emitter Saturation Voltage | 1.7V | |
| Test Conditions | 400V, 30A, 5 Ω, 15V | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tube | |
| Published | 2007 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Power Dissipation | 201.6W | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | RJH60F | |
| Pin Count | 3 | |
| Input Type | Standard | |
| Power - Max | 201.6W | |
| Collector Emitter Voltage (VCEO) | 1.82V | |
| Max Collector Current | 50A | |
| Reverse Recovery Time | 90 ns | |
| Vce(on) (Max) @ Vge, Ic | 1.82V @ 15V, 25A | |
| IGBT Type | Trench | |
| Td (on/off) @ 25°C | 46ns/70ns | |
| REACH SVHC | No SVHC | |
| RoHS Status | ROHS3 Compliant |
RJH60F0DPQ-A0#T0 Документы
- DatasheetsRJH60F0DPQ-A0
- ConflictMineralStatementRenesas-company-44.pdf
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