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1SS83TD-E Технические параметры
Renesas Electronics America Inc 1SS83TD-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | DO-204AH, DO-35, Axial | |
| Surface Mount | NO | |
| Supplier Device Package | DO-35 | |
| Diode Element Material | SILICON | |
| Number of Terminals | 2Terminals | |
| Mfr | Renesas Electronics America Inc | |
| Package | Bulk | |
| Product Status | Active | |
| Package Description | O-LALF-W2 | |
| Package Style | LONG FORM | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | GLASS | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | 1SS83TD-E | |
| Power Dissipation (Max) | 0.4 W | |
| Package Shape | ROUND | |
| Manufacturer | Renesas Electronics Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Risk Rank | 5.51 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Series | - | |
| JESD-609 Code | e2 | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN COPPER | |
| Additional Feature | HIGH RELIABILITY | |
| HTS Code | 8541.10.00.70 | |
| Terminal Position | AXIAL | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | O-LALF-W2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Diode Type | RECTIFIER DIODE | |
| Current - Reverse Leakage @ Vr | 200 nA @ 250 V | |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 100 mA | |
| Case Connection | ISOLATED | |
| Operating Temperature - Junction | 175°C | |
| Output Current-Max | 0.2 A | |
| Voltage - DC Reverse (Vr) (Max) | 250 V | |
| Current - Average Rectified (Io) | 200mA | |
| JEDEC-95 Code | DO-35 | |
| Capacitance @ Vr, F | 1.5pF @ 0V, 1MHz | |
| Reverse Recovery Time-Max | 0.1 µs | |
| Reverse Recovery Time (trr) | 100 ns |
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