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2SC1213C-E Технические параметры

Renesas Electronics America Inc  2SC1213C-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92
Mfr Renesas Electronics America Inc
Package Bulk
Product Status Active
Current-Collector (Ic) (Max) 500 mA
Свойство продукта Значение свойства
Series -
Operating Temperature 150°C (TJ)
Power - Max 400 mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 3V
Current - Collector Cutoff (Max) 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 600mV @ 15mA, 150mA
Voltage - Collector Emitter Breakdown (Max) 35 V
Frequency - Transition -
Просмотр сходства
2SC1213C-E brand manufacturers: Renesas Electronics America Inc, Anli stock, 2SC1213C-E reference price.Renesas Electronics America Inc. 2SC1213C-E parameters, 2SC1213C-E Datasheet PDF and pin diagram description download.You can use the 2SC1213C-E Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2SC1213C-E pin diagram and circuit diagram and usage method of function,2SC1213C-E electronics tutorials.You can download from the Anli.