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2SC2620QBTR-E Технические параметры
Renesas Electronics America Inc 2SC2620QBTR-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Factory Lead Time | 1 Week | |
| Surface Mount | YES | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | Renesas Electronics America Inc | |
| Package | Bulk | |
| Product Status | Active | |
| Risk Rank | 5.05 | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Life Cycle Code | Active | |
| Number of Elements | 1 Element | |
| Manufacturer | Renesas Electronics Corporation | |
| Package Shape | RECTANGULAR | |
| Manufacturer Part Number | 2SC2620QBTR-E | |
| Transition Frequency-Nom (fT) | 940 MHz | |
| Rohs Code | Yes | |
| Reflow Temperature-Max (s) | 20 | |
| Package Body Material | PLASTIC/EPOXY | |
| Moisture Sensitivity Levels | 1 | |
| Package Style | SMALL OUTLINE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Package Description | MPAK-3 | |
| Series | * | |
| JESD-609 Code | e6 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Bismuth (Sn/Bi) | |
| HTS Code | 8541.21.00.75 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Collector Current-Max (IC) | 0.02 A | |
| Collector-Emitter Voltage-Max | 20 V | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| Collector-Base Capacitance-Max | 1.2 pF |
Индекс :
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