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2SK2225-80-E#T2 Технические параметры
Renesas Electronics America Inc 2SK2225-80-E#T2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Surface Mount | NO | |
| Supplier Device Package | TO-3PFM | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | Renesas Electronics America Inc | |
| Tube | ||
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 2A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 15V | |
| Power Dissipation (Max) | 50W (Tc) | |
| Continuous Drain Current Id | 2 | |
| MSL | MSL 1 - Unlimited | |
| Qualification | - | |
| Vds - Drain-Source Breakdown Voltage | 1.5 kV | |
| Typical Turn-On Delay Time | 17 ns | |
| Vgs th - Gate-Source Threshold Voltage | 4 V | |
| Pd - Power Dissipation | 50 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 150 C | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Factory Pack QuantityFactory Pack Quantity | 25 | |
| Mounting Styles | Through Hole | |
| Forward Transconductance - Min | 0.45 S | |
| Channel Mode | Enhancement | |
| Manufacturer | Renesas Electronics | |
| Brand | Renesas Electronics | |
| Rds On - Drain-Source Resistance | 12 Ohms | |
| RoHS | Details | |
| Typical Turn-Off Delay Time | 150 ns | |
| Id - Continuous Drain Current | 2 A | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | PLASTIC/EPOXY | |
| Manufacturer Package Code | PRSS0003ZD-A3 | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Manufacturer Part Number | 2SK2225-80-E#T2 | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Part Life Cycle Code | Active | |
| Samacsys Description | General Purpose Power MOSFETs Nch Single Power MOSFET 1500V 2A 12000mohm TO-3PF | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Risk Rank | 5.74 | |
| Part Package Code | TO-3PF | |
| Drain Current-Max (ID) | 2 A | |
| Operating Temperature | 150°C | |
| Packaging | Tube | |
| Subcategory | MOSFETs | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Number of Channels | 1 ChannelChannel | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 50 | |
| Case Connection | ISOLATED | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 1A, 15V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 990 pF @ 10 V | |
| Rise Time | 50 ns | |
| Drain to Source Voltage (Vdss) | 1500 V | |
| Vgs (Max) | ±20V | |
| Polarity/Channel Type | N-CHANNEL | |
| Product Type | MOSFET | |
| Transistor Type | 1 N-Channel | |
| Drain-source On Resistance-Max | 12 Ω | |
| Pulsed Drain Current-Max (IDM) | 7 A | |
| DS Breakdown Voltage-Min | 1500 V | |
| Channel Type | N | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | - | |
| Product Category | MOSFET | |
| Width | 15.5 mm | |
| Height | 5.5 mm | |
| Length | 26.5 mm |
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