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- 5962-8855206UA
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5962-8855206UA Технические параметры
Renesas Electronics America Inc 5962-8855206UA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | ||
| Package / Case | 28-CDIP (0.300", 7.62mm) | |
| Mounting Type | Through Hole | |
| Surface Mount | NO | |
| Supplier Device Package | 28-CDIP | |
| Number of Terminals | 28Terminals | |
| Mfr | Renesas Electronics America Inc | |
| Package | Tube | |
| Product Status | Active | |
| Memory Types | Volatile | |
| Base Product Number | 5962-8855206 | |
| Shipping Restrictions | This product may require additional documentation to export from the United States. | |
| Maximum Operating Temperature | + 125 C | |
| Supply Voltage-Max | 5.5 V | |
| Unit Weight | 1.203871 oz | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 13 | |
| Supply Voltage-Min | 4.5 V | |
| Mounting Styles | Through Hole | |
| Interface Type | Parallel | |
| Manufacturer | Renesas Electronics | |
| Brand | Renesas Electronics | |
| RoHS | N | |
| Package Description | DIP, DIP28,.3 | |
| Package Style | IN-LINE | |
| Number of Words Code | 32000Words Codes | |
| Package Body Material | CERAMIC, GLASS-SEALED | |
| Package Equivalence Code | DIP28,.3 | |
| Operating Temperature-Min | -55 °C | |
| Access Time-Max | 25 ns | |
| Operating Temperature-Max | 125 °C | |
| Manufacturer Part Number | 5962-8855206UA | |
| Number of Words | 32768 wordsWord | |
| Supply Voltage-Nom (Vsup) | 5 V | |
| Package Code | DIP | |
| Package Shape | RECTANGULAR | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TELEDYNE E2V (UK) LTD | |
| Risk Rank | 1.16 | |
| Part Package Code | DIP | |
| Usage Level | Military grade | |
| Series | - | |
| Operating Temperature | -55°C ~ 125°C (TA) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Packaging | Tube | |
| JESD-609 Code | e0 | |
| ECCN Code | 3A001.A.2.C | |
| Type | Asynchronous | |
| Terminal Finish | TIN LEAD | |
| HTS Code | 8542.32.00.41 | |
| Subcategory | Memory & Data Storage | |
| Voltage - Supply | 4.5V ~ 5.5V | |
| Terminal Position | DUAL | |
| Terminal Form | THROUGH-HOLE | |
| Number of Functions | 1Function | |
| Terminal Pitch | 2.54 mm | |
| Reach Compliance Code | compliant | |
| Pin Count | 28 | |
| JESD-30 Code | R-GDIP-T28 | |
| Qualification Status | Qualified | |
| Supply Voltage-Max (Vsup) | 5.5 V | |
| Power Supplies | 5 V | |
| Temperature Grade | MILITARY | |
| Supply Voltage-Min (Vsup) | 4.5 V | |
| Memory Size | 256Kbit | |
| Operating Mode | ASYNCHRONOUS | |
| Supply Current-Max | 155 mA | |
| Access Time | 25 ns | |
| Memory Format | SRAM | |
| Memory Interface | Parallel | |
| Organization | 32 k x 8 | |
| Output Characteristics | 3-STATE | |
| Memory Width | 8 | |
| Write Cycle Time - Word, Page | 25ns | |
| Product Type | SRAM | |
| Standby Current-Max | 0.0008 A | |
| Memory Density | 262144 bit | |
| Screening Level | 38535Q/M;38534H;883B | |
| Parallel/Serial | PARALLEL | |
| I/O Type | COMMON | |
| Memory IC Type | STANDARD SRAM | |
| Standby Voltage-Min | 2 V | |
| Product Category | SRAM | |
| Memory Organization | 32K x 8 | |
| Width | 7.62 mm | |
| Height | 3.56 mm | |
| Length | 37.72 mm |
Индекс :
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