
Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Renesas Electronics America Inc BB304CDW-TL-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Arrays | |
Марка | ||
Factory Lead Time | 1 Week | |
Surface Mount | YES | |
Number of Terminals | 4Terminals | |
Transistor Element Material | SILICON | |
Mfr | Renesas Electronics America Inc | |
Package | Bulk | |
Product Status | Active | |
Package Description | LEEAD FREE, MINIMOLD, SC-82A, SOT-343MOD, CMPAK-4 | |
Package Style | SMALL OUTLINE | |
Package Body Material | PLASTIC/EPOXY | |
Manufacturer Part Number | BB304CDW-TL-E | |
Package Shape | RECTANGULAR | |
Manufacturer | Renesas Electronics Corporation | |
Number of Elements | 1 Element | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Risk Rank | 5.19 | |
Part Package Code | SC-82 |
Свойство продукта | Значение свойства | |
---|---|---|
Drain Current-Max (ID) | 0.025 A | |
Series | * | |
ECCN Code | EAR99 | |
Additional Feature | LOW NOISE | |
HTS Code | 8541.21.00.95 | |
Terminal Position | DUAL | |
Terminal Form | GULL WING | |
Reach Compliance Code | compliant | |
Pin Count | 4 | |
JESD-30 Code | R-PDSO-G4 | |
Qualification Status | Not Qualified | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Operating Mode | DUAL GATE, DEPLETION MODE | |
Transistor Application | AMPLIFIER | |
Polarity/Channel Type | N-CHANNEL | |
DS Breakdown Voltage-Min | 12 V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 0.05 pF | |
Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
Power Gain-Min (Gp) | 24 dB |