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HFA3127RZ Технические параметры

Renesas Electronics America Inc.  HFA3127RZ technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 7 Weeks
Mounting Type Surface Mount
Package / Case 16-VFQFN Exposed Pad
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 65mA
Number of Elements 5 Elements
Operating Temperature 175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 16Terminations
ECCN Code EAR99
Additional Feature LOW NOISE
Terminal Position QUAD
Terminal Form NO LEAD
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number HFA3127
Pin Count 16
JESD-30 Code S-PQCC-N16
Configuration SEPARATE, 5 ELEMENTS
Power - Max 150mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type 5 NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 2V
Voltage - Collector Emitter Breakdown (Max) 12V
Transition Frequency 8000MHz
Frequency - Transition 8GHz
Highest Frequency Band ULTRA HIGH FREQUENCY B
Noise Figure (dB Typ @ f) 3.5dB @ 1GHz
RoHS Status ROHS3 Compliant
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HFA3127RZ Документы

HFA3127RZ brand manufacturers: Renesas Electronics America Inc., Anli stock, HFA3127RZ reference price.Renesas Electronics America Inc.. HFA3127RZ parameters, HFA3127RZ Datasheet PDF and pin diagram description download.You can use the HFA3127RZ Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find HFA3127RZ pin diagram and circuit diagram and usage method of function,HFA3127RZ electronics tutorials.You can download from the Anli.