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HFA3135IHZ96 Технические параметры

Renesas Electronics America Inc.  HFA3135IHZ96 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 11 Weeks
Mounting Type Surface Mount
Package / Case SOT-23-6
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 26mA
Number of Elements 2 Elements
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Свойство продукта Значение свойства
Additional Feature LOW NOISE
Terminal Form GULL WING
Pin Count 6
JESD-30 Code R-PDSO-G6
Configuration SEPARATE, 2 ELEMENTS
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type 2 PNP (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 10mA 2V
Voltage - Collector Emitter Breakdown (Max) 9V
Transition Frequency 7000MHz
Frequency - Transition 7GHz
VCEsat-Max 0.25 V
Highest Frequency Band ULTRA HIGH FREQUENCY B
Noise Figure (dB Typ @ f) 5.2dB @ 900MHz
RoHS Status ROHS3 Compliant

HFA3135IHZ96 Документы

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