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NESG2031M05-T1-A Технические параметры
Renesas Electronics America Inc NESG2031M05-T1-A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | SOT-343F | |
| Mount | Surface Mount | |
| Surface Mount | YES | |
| Supplier Device Package | M05 | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON GERMANIUM | |
| Mfr | Renesas Electronics America Inc | |
| Product Status | Obsolete | |
| Package | Bulk | |
| Current-Collector (Ic) (Max) | 35mA | |
| Collector-Emitter Breakdown Voltage | 5 V | |
| Voltage Rating (DC) | 5 V | |
| RoHS | Compliant | |
| Package Description | SMALL OUTLINE, R-PDSO-F4 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Transition Frequency-Nom (fT) | 25000 MHz | |
| Manufacturer Part Number | NESG2031M05-T1-A | |
| Package Shape | RECTANGULAR | |
| Manufacturer | NEC Electronics Group | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NEC ELECTRONICS CORP | |
| Risk Rank | 5.29 | |
| Series | - | |
| Packaging | Tape & Reel (TR) | |
| JESD-609 Code | e6 | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN BISMUTH | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -65 °C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Additional Feature | LOW NOISE | |
| Max Power Dissipation | 175 mW | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Current Rating | 35 mA | |
| Frequency | 25 GHz | |
| Pin Count | 4 | |
| JESD-30 Code | R-PDSO-F4 | |
| Qualification Status | Not Qualified | |
| Polarity | NPN | |
| Configuration | SINGLE | |
| Power - Max | 175mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Max Collector Current | 35 mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 130 @ 5mA, 2V | |
| Gain | 10dB ~ 17dB | |
| Voltage - Collector Emitter Breakdown (Max) | 5V | |
| Transition Frequency | 25 GHz | |
| Frequency - Transition | 25GHz | |
| Collector Base Voltage (VCBO) | 13 V | |
| Emitter Base Voltage (VEBO) | 1.5 V | |
| Collector Current-Max (IC) | 0.035 A | |
| Continuous Collector Current | 35 mA | |
| Collector-Emitter Voltage-Max | 5 V | |
| Highest Frequency Band | C BAND | |
| Collector-Base Capacitance-Max | 0.25 pF | |
| Noise Figure (dB Typ @ f) | 0.8dB ~ 1.3dB @ 2GHz ~ 5.2GHz | |
| Width | 1.25 mm | |
| Height | 590 µm | |
| Length | 2 mm | |
| Lead Free | Lead Free |
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