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NP20P06YLG-E1-AY Технические параметры
Renesas Electronics America Inc NP20P06YLG-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | 8-SMD, Flat Lead Exposed Pad | |
| Surface Mount | YES | |
| Supplier Device Package | 8-HSON | |
| Mfr | Renesas Electronics America Inc | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 20A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Power Dissipation (Max) | 1W (Ta), 57W (Tc) | |
| Base Product Number | NP20P06 | |
| Continuous Drain Current Id | 20 | |
| Factory Pack QuantityFactory Pack Quantity | 2500 | |
| Manufacturer | Renesas Electronics | |
| Brand | Renesas Electronics | |
| RoHS | Details | |
| Manufacturer Package Code | PLSN0008KA-A8 | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 175 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | NP20P06YLG-E1-AY | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Risk Rank | 5.69 | |
| Part Package Code | HSON | |
| Series | - |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Temperature | 175°C | |
| Packaging | Cut Tape | |
| ECCN Code | EAR99 | |
| Subcategory | MOSFETs | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 8 | |
| Configuration | Single | |
| Power Dissipation | 57 | |
| FET Type | P-Channel | |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 2407 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Vgs (Max) | ±20V | |
| Polarity/Channel Type | P-CHANNEL | |
| Product Type | MOSFET | |
| Drain Current-Max (Abs) (ID) | 20 A | |
| Channel Type | P | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 57 W | |
| FET Feature | - | |
| Product Category | MOSFET | |
| Width | 5 mm | |
| Height | 1.45 mm | |
| Length | 5.4 mm |
Индекс :
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