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NP50N04YUK-E1-AY Технические параметры
Renesas Electronics America Inc NP50N04YUK-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerLDFN | |
| Surface Mount | YES | |
| Supplier Device Package | 8-HSON (5x5.4) | |
| Number of Terminals | 5Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | Renesas Electronics America Inc | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 50A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 1W (Ta), 97W (Tc) | |
| Factory Pack QuantityFactory Pack Quantity | 2500 | |
| Manufacturer | Renesas Electronics | |
| Brand | Renesas Electronics | |
| RoHS | Details | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Manufacturer Package Code | PLSN0008KA-A8 | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Manufacturer Part Number | NP50N04YUK-E1-AY | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Risk Rank | 5.7 | |
| Part Package Code | HSON | |
| Drain Current-Max (ID) | 50 A | |
| Series | Automotive, AEC-Q101 | |
| Operating Temperature | 175°C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Packaging | Cut Tape | |
| Subcategory | MOSFETs | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 8 | |
| Reference Standard | AEC-Q101 | |
| JESD-30 Code | R-PDSO-F5 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 25A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V | |
| Drain to Source Voltage (Vdss) | 40 V | |
| Vgs (Max) | ±20V | |
| Polarity/Channel Type | N-CHANNEL | |
| Product Type | MOSFET | |
| Drain-source On Resistance-Max | 0.0048 Ω | |
| DS Breakdown Voltage-Min | 40 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | - | |
| Feedback Cap-Max (Crss) | 240 pF | |
| Product Category | MOSFET | |
| Width | 5 mm | |
| Height | 1.45 mm | |
| Length | 5.4 mm |
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