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NP90N06VLK-E1-AY Технические параметры

Renesas Electronics America Inc  NP90N06VLK-E1-AY technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-252 (MP-3ZP)
Mfr Renesas Electronics America Inc
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Power Dissipation (Max) 1.2W (Ta), 147W (Tc)
Vds - Drain-Source Breakdown Voltage 60 V
Typical Turn-On Delay Time 24 ns
Vgs th - Gate-Source Threshold Voltage 2.5 V
Pd - Power Dissipation 1.2 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Factory Pack QuantityFactory Pack Quantity 2500
Mounting Styles SMD/SMT
Forward Transconductance - Min 40 S
Channel Mode Enhancement
Manufacturer Renesas Electronics
Brand Renesas Electronics
Rds On - Drain-Source Resistance 5.3 mOhms
Свойство продукта Значение свойства
RoHS Details
Typical Turn-Off Delay Time 60 ns
Id - Continuous Drain Current 90 A
Series -
Operating Temperature 175°C
Packaging Reel
Subcategory MOSFETs
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.3mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Rise Time 7 ns
Drain to Source Voltage (Vdss) 60 V
Vgs (Max) ±20V
Product Type MOSFET
Transistor Type 1 N-Channel
FET Feature -
Product Category MOSFET
Width 6.1 mm
Height 2.3 mm
Length 6.5 mm
Просмотр сходства
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