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RJK1028DNS-00#J5 Технические параметры

Renesas Electronics America Inc  RJK1028DNS-00#J5 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-HWSON (3.3x3.3)
Mfr Renesas Electronics America Inc
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Power Dissipation (Max) 10W (Ta)
Vds - Drain-Source Breakdown Voltage 100 V
Typical Turn-On Delay Time 8.3 ns
Vgs th - Gate-Source Threshold Voltage 2.5 V
Pd - Power Dissipation 10 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 5 V, + 12 V
Factory Pack QuantityFactory Pack Quantity 5000
Mounting Styles SMD/SMT
Forward Transconductance - Min 8.8 S
Channel Mode Enhancement
Manufacturer Renesas Electronics
Brand Renesas Electronics
Qg - Gate Charge 3.7 nC
Свойство продукта Значение свойства
Rds On - Drain-Source Resistance 165 mOhms
RoHS Details
Typical Turn-Off Delay Time 35 ns
Id - Continuous Drain Current 4 A
Series -
Operating Temperature 150°C
Packaging Reel
Subcategory MOSFETs
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 165mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 3.7 nC @ 4.5 V
Rise Time 4.8 ns
Drain to Source Voltage (Vdss) 100 V
Vgs (Max) +12V, -5V
Product Type MOSFET
Transistor Type 1 N-Channel
FET Feature -
Product Category MOSFET
Width 3.3 mm
Height 0.8 mm
Length 3.3 mm
Просмотр сходства
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