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2SK317 Технические параметры
Renesas Electronics Corporation 2SK317 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | NO | |
| Shape | Round | |
| Material - Cone | Polyethylene Naphthalate (PEN), Polyurethane (PU) | |
| Material - Magnet | Nd-Fe-B | |
| Exterior Housing Material | 1 | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Drain Current-Max (ID) | 8 A | |
| Operating Temperature-Max | 150 °C | |
| Series | AS | |
| Packaging | Bulk | |
| Operating Temperature | -25°C ~ 50°C | |
| Size / Dimension | 0.866" Dia (22.00mm) | |
| Part Status | Active | |
| Termination | None | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Type | General Purpose | |
| Reach Compliance Code | compliant | |
| Configuration | SINGLE | |
| Impedance | 4 Ohms | |
| Operating Mode | ENHANCEMENT MODE | |
| Power - Max | 3.5 W | |
| Polarity/Channel Type | N-CHANNEL | |
| Sampling Rate (Per Second) | 0.315" (8.00mm) | |
| Frequency Range | 300 Hz ~ 20 kHz | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 120 W | |
| Power - Rated | 3 W | |
| Port Location | Top | |
| Kit Type | 300Hz | |
| Efficiency - dBA | 80.00 | |
| Efficiency - Type | Sensitivity | |
| Efficiency - Testing | 1W/500mm | |
| Distortion Rating | 5% @ 1kHz, 1W |
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