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NE3210S01-T1B Технические параметры

Renesas Electronics Corporation  NE3210S01-T1B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Special Purpose
Марка
Surface Mount YES
Housing material ABS UL94-V0
Number of Terminals 4Terminals
Transistor Element Material SILICON
Exterior Housing Material 1
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer RENESAS ELECTRONICS CORP
Package Description MICROWAVE, X-PXMW-G4
Drain Current-Max (ID) 0.015 A
Operating Temperature-Max 125 °C
Package Body Material PLASTIC/EPOXY
Package Shape UNSPECIFIED
Package Style MICROWAVE
Relative humidity 35...85 %
Dielectric strength 2500 (50 Hz / 1 min.) V
Operating ambient temperature -40...+80 °C
Load voltage ~90...250 V
Transport packaging size/quantity 42.5*35.5*15/100
Gross weight 124.50
JESD-609 Code e0
Pbfree Code Yes
ECCN Code EAR99
Type Single-phase linear solid state relay from the SCR series with fuse
Terminal Finish TIN LEAD
Свойство продукта Значение свойства
HTS Code 8541.21.00.95
Terminal Position UNSPECIFIED
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 230
Depth 62 mm
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code X-PXMW-G4
Qualification Status Not Qualified
Configuration SINGLE
Insulation resistance ≥100 (at Uinsp.dc=500V) MΩ
Leakage current not more than 0.5% mA
Operating Mode DEPLETION MODE
Case Connection SOURCE
Control mode phase control
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
DS Breakdown Voltage-Min 3 V
FET Technology HETERO-JUNCTION
Load current 25 A
Fuse 10x38 mm 10 A
Control current ≤4-20 mA
Highest Frequency Band KU BAND
Power Dissipation Ambient-Max 0.165 W
Switching time ≤1.0 ms
Power Gain-Min (Gp) 12 dB
Height 35 mm

NE3210S01-T1B Документы

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