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Renesas Electronics Corporation RJK0362DSP-00-J0 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - Special Purpose | |
Марка | ||
Surface Mount | YES | |
Number of Terminals | 8Terminals | |
Transistor Element Material | SILICON | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | RENESAS TECHNOLOGY CORP | |
Part Package Code | SOT | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Drain Current-Max (ID) | 16 A | |
Moisture Sensitivity Levels | 1 | |
Number of Elements | 1 Element | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE |
Свойство продукта | Значение свойства | |
---|---|---|
Pbfree Code | Yes | |
ECCN Code | EAR99 | |
Terminal Position | DUAL | |
Terminal Form | GULL WING | |
Reach Compliance Code | unknown | |
Pin Count | 8 | |
JESD-30 Code | R-PDSO-G8 | |
Qualification Status | Not Qualified | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Operating Mode | ENHANCEMENT MODE | |
Transistor Application | SWITCHING | |
Polarity/Channel Type | N-CHANNEL | |
Drain-source On Resistance-Max | 0.0099 Ω | |
Pulsed Drain Current-Max (IDM) | 128 A | |
DS Breakdown Voltage-Min | 30 V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Power Dissipation-Max (Abs) | 2 W |