Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
FPD200P70 Технические параметры
RF Micro Devices Inc FPD200P70 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | GALLIUM ARSENIDE | |
| Exterior Housing Material | 1 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RF MICRO DEVICES INC | |
| Package Description | DISK BUTTON, O-CRDB-F4 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | ROUND | |
| Package Style | DISK BUTTON | |
| JESD-609 Code | e4 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | GOLD |
| Свойство продукта | Значение свойства | |
|---|---|---|
| HTS Code | 8541.21.00.95 | |
| Terminal Position | RADIAL | |
| Terminal Form | FLAT | |
| Reach Compliance Code | compliant | |
| Pin Count | 4 | |
| JESD-30 Code | O-CRDB-F4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | DEPLETION MODE | |
| Case Connection | SOURCE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| DS Breakdown Voltage-Min | 8 V | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Highest Frequency Band | K BAND | |
| Power Dissipation Ambient-Max | 0.47 W | |
| Saturation Current | 1 | |
| Power Gain-Min (Gp) | 9 dB |
FPD200P70 Документы
- Datasheetsad986b9902225afb875cf46a87f5ccfe.pdf
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ