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2N5550/D26Z Технические параметры

Rochester Electronics  2N5550/D26Z technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка Rochester Electronics
Mount Through Hole
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 140 V
hFEMin 60
Number of Elements 1 Element
RoHS Compliant
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Max Power Dissipation 625 mW
Свойство продукта Значение свойства
Frequency 300 MHz
Polarity NPN
Element Configuration Single
Power Dissipation 625 mW
Gain Bandwidth Product 300 MHz
Collector Emitter Voltage (VCEO) 140 V
Max Collector Current 600 mA
Transition Frequency 300 MHz
Collector Base Voltage (VCBO) 160 V
Emitter Base Voltage (VEBO) 6 V
Lead Free Lead Free
Просмотр сходства
2N5550/D26Z brand manufacturers: Rochester Electronics, Anli stock, 2N5550/D26Z reference price.Rochester Electronics. 2N5550/D26Z parameters, 2N5550/D26Z Datasheet PDF and pin diagram description download.You can use the 2N5550/D26Z Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2N5550/D26Z pin diagram and circuit diagram and usage method of function,2N5550/D26Z electronics tutorials.You can download from the Anli.