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FGA25N120ANDTU Технические параметры

Rochester Electronics  FGA25N120ANDTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка Rochester Electronics
Mount Through Hole
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 1.2 kV
Voltage Rating (DC) 1.2 kV
RoHS Compliant
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Свойство продукта Значение свойства
Max Power Dissipation 310 W
Current Rating 25 A
Element Configuration Single
Power Dissipation 310 W
Collector Emitter Voltage (VCEO) 3.2 V
Max Collector Current 40 A
Reverse Recovery Time 235 ns
Lead Free Lead Free
Просмотр сходства
FGA25N120ANDTU brand manufacturers: Rochester Electronics, Anli stock, FGA25N120ANDTU reference price.Rochester Electronics. FGA25N120ANDTU parameters, FGA25N120ANDTU Datasheet PDF and pin diagram description download.You can use the FGA25N120ANDTU Transistors - IGBTs - Single, DSP Datesheet PDF, find FGA25N120ANDTU pin diagram and circuit diagram and usage method of function,FGA25N120ANDTU electronics tutorials.You can download from the Anli.