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- 2ED020I12-F
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2ED020I12-F Технические параметры
Rochester Electronics, LLC 2ED020I12-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | PMIC - Gate Drivers | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | 20-SOIC (0.295, 7.50mm Width), 18 Leads | |
| Surface Mount | YES | |
| Driver Configuration | Half-Bridge | |
| Operating Temperature (Max.) | 105°C | |
| Operating Temperature (Min.) | -40°C | |
| Packaging | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 18Terminations | |
| Voltage - Supply | 0V~18V | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Number of Functions | 2Functions |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Supply Voltage | 15V | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PDSO-G18 | |
| Qualification Status | COMMERCIAL | |
| Temperature Grade | INDUSTRIAL | |
| Input Type | Inverting | |
| Channel Type | Independent | |
| Number of Drivers | 2Drivers | |
| Output Peak Current Limit-Nom | 2A | |
| Gate Type | IGBT, N-Channel MOSFET | |
| Current - Peak Output (Source, Sink) | 1A 2A | |
| Built-in Protections | THERMAL; UNDER VOLTAGE | |
| High Side Voltage - Max (Bootstrap) | 1.2V | |
| Output Current Flow Direction | SOURCE SINK | |
| Width | 7.6mm | |
| RoHS Status | Non-RoHS Compliant |
2ED020I12-F Документы
- DatasheetsINFNS08644 Datasheet
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