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2N5551YTA Технические параметры
Rochester Electronics, LLC 2N5551YTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 600mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Box (TB) | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | BOTTOM | |
| JESD-30 Code | O-PBCY-T3 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SINGLE | |
| Power - Max | 625mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 10mA 5V | |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA | |
| Voltage - Collector Emitter Breakdown (Max) | 160V | |
| Transition Frequency | 100MHz | |
| Frequency - Transition | 100MHz | |
| RoHS Status | ROHS3 Compliant |
2N5551YTA Документы
- DatasheetsFAIRS24024 Datasheet
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