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2N5551ZL1G Технические параметры

Rochester Electronics, LLC  2N5551ZL1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 600mA
Number of Elements 1 Element
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish TIN SILVER COPPER
Additional Feature EUROPEAN PART NUMBER
Terminal Position BOTTOM
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status COMMERCIAL
Configuration SINGLE
Power - Max 625mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 160V
Transition Frequency 100MHz
Frequency - Transition 300MHz
RoHS Status ROHS3 Compliant
Просмотр сходства

2N5551ZL1G Документы

2N5551ZL1G brand manufacturers: Rochester Electronics, LLC, Anli stock, 2N5551ZL1G reference price.Rochester Electronics, LLC. 2N5551ZL1G parameters, 2N5551ZL1G Datasheet PDF and pin diagram description download.You can use the 2N5551ZL1G Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2N5551ZL1G pin diagram and circuit diagram and usage method of function,2N5551ZL1G electronics tutorials.You can download from the Anli.