Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
2N5657 Технические параметры
Rochester Electronics, LLC 2N5657 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-225AA, TO-126-3 | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 500mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Bulk | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | TIN LEAD | |
| Terminal Position | SINGLE | |
| Peak Reflow Temperature (Cel) | 240 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SINGLE | |
| Power - Max | 20W | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 100mA 10V | |
| Current - Collector Cutoff (Max) | 100μA | |
| Vce Saturation (Max) @ Ib, Ic | 10V @ 100mA, 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 350V | |
| Transition Frequency | 10MHz | |
| Frequency - Transition | 10MHz | |
| RoHS Status | Non-RoHS Compliant |
2N5657 Документы
- DatasheetsONSMS12831 Datasheet
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ