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BC847BDW1T3 Технические параметры
Rochester Electronics, LLC BC847BDW1T3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays | |
| Марка | ||
| Surface Mount | YES | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Mounting Type | Surface Mount | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Current-Collector (Ic) (Max) | 100mA | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -55°C~150°C TJ | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 6 | |
| JESD-30 Code | R-PDSO-G6 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SEPARATE, 2 ELEMENTS | |
| Power - Max | 250mW | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | 2 NPN (Dual) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA 5V | |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 45V | |
| Transition Frequency | 100MHz | |
| Frequency - Transition | 100MHz | |
| RoHS Status | Non-RoHS Compliant |
BC847BDW1T3 Документы
- DatasheetsONSMS14311 Datasheet
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