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BS170RLRM Технические параметры
Rochester Electronics, LLC BS170RLRM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | TIN LEAD | |
| Terminal Position | BOTTOM | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | 240 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 3 | |
| JESD-30 Code | O-PBCY-T3 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-226AA | |
| Drain Current-Max (Abs) (ID) | 0.5A | |
| Drain-source On Resistance-Max | 5Ohm | |
| DS Breakdown Voltage-Min | 60V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| RoHS Status | Non-RoHS Compliant |
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