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BSC205N10LS G Технические параметры

Rochester Electronics, LLC  BSC205N10LS G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package PG-TDSON-8-1
Current - Continuous Drain (Id) @ 25℃ 7.4A Ta 45A Tc
Drive Voltage (Max Rds On, Min Rds On) 4.5V 10V
Power Dissipation (Max) 76W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Свойство продукта Значение свойства
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 20.5mOhm @ 45A, 10V
Vgs(th) (Max) @ Id 2.4V @ 43μA
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
RoHS Status Non-RoHS Compliant
Просмотр сходства
BSC205N10LS G brand manufacturers: Rochester Electronics, LLC, Anli stock, BSC205N10LS G reference price.Rochester Electronics, LLC. BSC205N10LS G parameters, BSC205N10LS G Datasheet PDF and pin diagram description download.You can use the BSC205N10LS G Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find BSC205N10LS G pin diagram and circuit diagram and usage method of function,BSC205N10LS G electronics tutorials.You can download from the Anli.