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BUZ215 Технические параметры
Rochester Electronics, LLC BUZ215 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 5A | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 75W | |
| Operating Temperature | -55°C~150°C | |
| Part Status | Obsolete | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | NOT SPECIFIED | |
| Additional Feature | FREDFET | |
| Terminal Position | SINGLE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 2A | |
| Drain to Source Voltage (Vdss) | 500V | |
| Vgs (Max) | 20V | |
| JEDEC-95 Code | TO-220AB | |
| Drain Current-Max (Abs) (ID) | 5A | |
| Drain-source On Resistance-Max | 1.5Ohm | |
| Pulsed Drain Current-Max (IDM) | 20A | |
| DS Breakdown Voltage-Min | 500V | |
| RoHS Status | ROHS3 Compliant |
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