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DS1245Y-100 Технические параметры
Rochester Electronics, LLC DS1245Y-100 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | 32-DIP Module (0.600, 15.24mm) | |
| Surface Mount | NO | |
| Memory Types | Non-Volatile | |
| Operating Temperature | 0°C~70°C TA | |
| Packaging | Tube | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 32Terminations | |
| Terminal Finish | TIN LEAD | |
| Voltage - Supply | 4.5V~5.5V | |
| Terminal Position | DUAL | |
| Peak Reflow Temperature (Cel) | 245 | |
| Number of Functions | 1Function |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Supply Voltage | 5V | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 32 | |
| JESD-30 Code | R-XDMA-T32 | |
| Qualification Status | COMMERCIAL | |
| Supply Voltage-Max (Vsup) | 5.5V | |
| Supply Voltage-Min (Vsup) | 4.5V | |
| Memory Size | 1Mb 128K x 8 | |
| Operating Mode | ASYNCHRONOUS | |
| Memory Format | NVSRAM | |
| Memory Interface | Parallel | |
| Organization | 128KX8 | |
| Memory Width | 8 | |
| Write Cycle Time - Word, Page | 100ns | |
| Memory Density | 1048576 bit | |
| Access Time (Max) | 100 ns | |
| RoHS Status | Non-RoHS Compliant |
DS1245Y-100 Документы
- DatasheetsMAXMS10706 Datasheet
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