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FDC645N Технические параметры
Rochester Electronics LLC FDC645N technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 6Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | SOT | |
| Package Description | SUPERSOT-6 | |
| Drain Current-Max (ID) | 0.0055 A | |
| Moisture Sensitivity Levels | 1 | |
| Number of Elements | 1 Element | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| JESD-609 Code | e3 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pbfree Code | Yes | |
| Terminal Finish | MATTE TIN | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 6 | |
| JESD-30 Code | R-PDSO-G6 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.03 Ω | |
| DS Breakdown Voltage-Min | 30 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
FDC645N Документы
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