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FDD6296 Технические параметры
Rochester Electronics LLC FDD6296 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | YES | |
| Package / Case | 4-DIP (0.300", 7.62mm) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | 4-DIP | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | TO-252 | |
| Package Description | DPAK-3 | |
| Drain Current-Max (ID) | 15 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Series | WL-OCTR | |
| Operating Temperature | -40°C ~ 100°C | |
| Packaging | Tube | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| Part Status | Active | |
| Terminal Finish | MATTE TIN | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | COMMERCIAL | |
| Approval Agency | CQC, cULus, cURus, UL, VDE | |
| Voltage - Isolation | 5000Vrms | |
| Output Type | Triac | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Number of Channels | 1Channel | |
| Contact Tail Size | 10mA | |
| Operating Mode | ENHANCEMENT MODE | |
| Voltage - Forward (Vf) (Typ) | 1.24V | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-252 | |
| Drain-source On Resistance-Max | 0.0088 Ω | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| DS Breakdown Voltage-Min | 30 V | |
| Current - DC Forward (If) (Max) | 60 mA | |
| Avalanche Energy Rating (Eas) | 165 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Number of Macro Cells | NoMacro Cell | |
| Current - Cathode | 257µA (Typ) | |
| Static dV/dt (Min) | 1kV/µs | |
| Delay Time - Propagation | 400 V | |
| Saturation Current | 1 |
FDD6296 Документы
- Datasheetse674c25099058cb2f65f232c21dd74f9.pdf
Индекс :
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