Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
FDW2521C Технические параметры
Rochester Electronics, LLC FDW2521C technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | 8-TSSOP (0.173, 4.40mm Width) | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 5.5A 3.8A | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | PowerTrench® | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 8Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | unknown |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 8 | |
| JESD-30 Code | R-PDSO-G8 | |
| Qualification Status | Not Qualified | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power - Max | 600mW | |
| FET Type | N and P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 21m Ω @ 5.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1082pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 4.5V | |
| Drain to Source Voltage (Vdss) | 20V | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| JEDEC-95 Code | MO-153AA | |
| Drain Current-Max (Abs) (ID) | 5.5A | |
| Drain-source On Resistance-Max | 0.021Ohm | |
| DS Breakdown Voltage-Min | 20V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| RoHS Status | ROHS3 Compliant |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ