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FJN3309RTA Технические параметры

Rochester Electronics, LLC  FJN3309RTA technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
Packaging Tape & Box (TB)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish MATTE TIN
Additional Feature BUILT IN BIAS RESISTOR
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT APPLICABLE
Свойство продукта Значение свойства
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status COMMERCIAL
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 300mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 40V
Transition Frequency 250MHz
Frequency - Transition 250MHz
Resistor - Base (R1) 4.7 k Ω
RoHS Status ROHS3 Compliant

FJN3309RTA Документы

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