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FJV4103RMTF Технические параметры

Rochester Electronics, LLC  FJV4103RMTF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Current-Collector (Ic) (Max) 100mA
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 200mW
Свойство продукта Значение свойства
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 200MHz
Resistor - Base (R1) 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms
RoHS Status ROHS3 Compliant
Просмотр сходства

FJV4103RMTF Документы

FJV4103RMTF brand manufacturers: Rochester Electronics, LLC, Anli stock, FJV4103RMTF reference price.Rochester Electronics, LLC. FJV4103RMTF parameters, FJV4103RMTF Datasheet PDF and pin diagram description download.You can use the FJV4103RMTF Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find FJV4103RMTF pin diagram and circuit diagram and usage method of function,FJV4103RMTF electronics tutorials.You can download from the Anli.