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FJV4104RMTF Технические параметры

Rochester Electronics, LLC  FJV4104RMTF technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Current-Collector (Ic) (Max) 100mA
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 200mW
Свойство продукта Значение свойства
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 200MHz
Resistor - Base (R1) 47 kOhms
Resistor - Emitter Base (R2) 47 kOhms
RoHS Status Non-RoHS Compliant
Просмотр сходства

FJV4104RMTF Документы

FJV4104RMTF brand manufacturers: Rochester Electronics, LLC, Anli stock, FJV4104RMTF reference price.Rochester Electronics, LLC. FJV4104RMTF parameters, FJV4104RMTF Datasheet PDF and pin diagram description download.You can use the FJV4104RMTF Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find FJV4104RMTF pin diagram and circuit diagram and usage method of function,FJV4104RMTF electronics tutorials.You can download from the Anli.