Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Rochester Electronics LLC FQB11N40CTM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Transport packaging size/quantity | 48*32*22.5/10 | |
| Gross weight | 595.00 | |
| Package Style | SMALL OUTLINE | |
| Package Shape | RECTANGULAR | |
| Package Body Material | PLASTIC/EPOXY | |
| Drain Current-Max (ID) | 10.5 A | |
| Package Description | LEAD FREE, D2PAK-3 | |
| Part Package Code | D2PAK | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Life Cycle Code | Active | |
| Rohs Code | Yes | |
| Capacitors series | KGM | |
| Case - mm | 2012 | |
| Case - inch | 0805 | |
| Mounting | SMD | |
| Kind of capacitor | MLCC | |
| Type of capacitor | ceramic | |
| Operating temperature | -55...125°C | |
| Tolerance | ±5% | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| Type | Soldering Mat with Magnet |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | MATTE TIN | |
| Color | Blue | |
| Additional Feature | FAST SWITCHING | |
| Capacitance | 0.22µF | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 245 | |
| Reach Compliance Code | unknown | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | COMMERCIAL | |
| Dielectric | X7R | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-263AB | |
| Drain-source On Resistance-Max | 0.53 Ω | |
| Pulsed Drain Current-Max (IDM) | 42 A | |
| DS Breakdown Voltage-Min | 400 V | |
| Avalanche Energy Rating (Eas) | 360 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Saturation Current | 1 | |
| Operating voltage | 100V | |
| Length | 450 mm | |
| Width | 300 mm |