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Rochester Electronics, LLC FQP5N30 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Single | |
Марка | ||
Mounting Type | Through Hole | |
Package / Case | TO-220-3 | |
Surface Mount | NO | |
Transistor Element Material | SILICON | |
Current - Continuous Drain (Id) @ 25℃ | 5.4A Tc | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Number of Elements | 1 Element | |
Power Dissipation (Max) | 70W Tc | |
Operating Temperature | -55°C~150°C TJ | |
Packaging | Tube | |
Series | QFET® | |
JESD-609 Code | e3 | |
Pbfree Code | yes | |
Part Status | Obsolete | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
Terminal Finish | MATTE TIN | |
Terminal Position | SINGLE | |
Peak Reflow Temperature (Cel) | NOT APPLICABLE | |
Reach Compliance Code | unknown |
Свойство продукта | Значение свойства | |
---|---|---|
Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE | |
Pin Count | 3 | |
JESD-30 Code | R-PSFM-T3 | |
Qualification Status | COMMERCIAL | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Operating Mode | ENHANCEMENT MODE | |
FET Type | N-Channel | |
Transistor Application | SWITCHING | |
Rds On (Max) @ Id, Vgs | 900m Ω @ 2.7A, 10V | |
Vgs(th) (Max) @ Id | 5V @ 250μA | |
Input Capacitance (Ciss) (Max) @ Vds | 430pF @ 25V | |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V | |
Drain to Source Voltage (Vdss) | 300V | |
Vgs (Max) | ±30V | |
JEDEC-95 Code | TO-220AB | |
Drain Current-Max (Abs) (ID) | 5.4A | |
Drain-source On Resistance-Max | 0.9Ohm | |
Pulsed Drain Current-Max (IDM) | 21.6A | |
DS Breakdown Voltage-Min | 300V | |
Avalanche Energy Rating (Eas) | 340 mJ | |
RoHS Status | ROHS3 Compliant |