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FQPF1N60 Технические параметры

Rochester Electronics, LLC  FQPF1N60 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 900mA Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 21W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish TIN
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11.5 Ω @ 450mA, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±30V
Drain Current-Max (Abs) (ID) 0.9A
Pulsed Drain Current-Max (IDM) 3.6A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 50 mJ
RoHS Status ROHS3 Compliant
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FQPF1N60 Документы

FQPF1N60 brand manufacturers: Rochester Electronics, LLC, Anli stock, FQPF1N60 reference price.Rochester Electronics, LLC. FQPF1N60 parameters, FQPF1N60 Datasheet PDF and pin diagram description download.You can use the FQPF1N60 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find FQPF1N60 pin diagram and circuit diagram and usage method of function,FQPF1N60 electronics tutorials.You can download from the Anli.