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HGTP7N60B3D Технические параметры

Rochester Electronics, LLC  HGTP7N60B3D technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 14A
Number of Elements 1 Element
Test Conditions 480V, 7A, 50 Ω, 15V
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3Terminations
Terminal Finish MATTE TIN
Additional Feature LOW CONDUCTION LOSS
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Свойство продукта Значение свойства
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 60W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Reverse Recovery Time 37ns
JEDEC-95 Code TO-220AB
Voltage - Collector Emitter Breakdown (Max) 600V
Turn On Time 46 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 7A
Turn Off Time-Nom (toff) 350 ns
Gate Charge 23nC
Current - Collector Pulsed (Icm) 56A
Td (on/off) @ 25°C 26ns/130ns
Switching Energy 160μJ (on), 120μJ (off)
RoHS Status ROHS3 Compliant

HGTP7N60B3D Документы

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