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HUF75329P3 Технические параметры

Rochester Electronics, LLC  HUF75329P3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 49A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 128W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series UltraFET™
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish TIN LEAD
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 24m Ω @ 49A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1.06pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 75nC @ 20V
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 42A
Drain-source On Resistance-Max 0.025Ohm
DS Breakdown Voltage-Min 55V
RoHS Status Non-RoHS Compliant
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HUF75329P3 Документы

HUF75329P3 brand manufacturers: Rochester Electronics, LLC, Anli stock, HUF75329P3 reference price.Rochester Electronics, LLC. HUF75329P3 parameters, HUF75329P3 Datasheet PDF and pin diagram description download.You can use the HUF75329P3 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find HUF75329P3 pin diagram and circuit diagram and usage method of function,HUF75329P3 electronics tutorials.You can download from the Anli.