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IPD110N12N3GBUMA1 Технические параметры

Rochester Electronics, LLC  IPD110N12N3GBUMA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3
Current - Continuous Drain (Id) @ 25℃ 75A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 136W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Свойство продукта Значение свойства
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 83μA
Input Capacitance (Ciss) (Max) @ Vds 4.31pF @ 60V
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Drain to Source Voltage (Vdss) 120V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
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IPD110N12N3GBUMA1 Документы

IPD110N12N3GBUMA1 brand manufacturers: Rochester Electronics, LLC, Anli stock, IPD110N12N3GBUMA1 reference price.Rochester Electronics, LLC. IPD110N12N3GBUMA1 parameters, IPD110N12N3GBUMA1 Datasheet PDF and pin diagram description download.You can use the IPD110N12N3GBUMA1 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPD110N12N3GBUMA1 pin diagram and circuit diagram and usage method of function,IPD110N12N3GBUMA1 electronics tutorials.You can download from the Anli.