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IPD80N06S3-09 Технические параметры

Rochester Electronics, LLC  IPD80N06S3-09 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 80A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 107W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Terminal Finish MATTE TIN
Additional Feature ULTRA LOW RESISTANCE
Terminal Position SINGLE
Terminal Form GULL WING
Reach Compliance Code unknown
Свойство продукта Значение свойства
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status COMMERCIAL
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.4m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 55μA
Input Capacitance (Ciss) (Max) @ Vds 6.1pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±20V
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 80A
Drain-source On Resistance-Max 0.0084Ohm
Pulsed Drain Current-Max (IDM) 320A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 170 mJ
RoHS Status ROHS3 Compliant
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IPD80N06S3-09 Документы

IPD80N06S3-09 brand manufacturers: Rochester Electronics, LLC, Anli stock, IPD80N06S3-09 reference price.Rochester Electronics, LLC. IPD80N06S3-09 parameters, IPD80N06S3-09 Datasheet PDF and pin diagram description download.You can use the IPD80N06S3-09 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPD80N06S3-09 pin diagram and circuit diagram and usage method of function,IPD80N06S3-09 electronics tutorials.You can download from the Anli.