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IPI80N06S3-05 Технические параметры

Rochester Electronics, LLC  IPI80N06S3-05 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount NO
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 80A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 165W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish MATTE TIN
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status COMMERCIAL
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.4m Ω @ 63A, 10V
Vgs(th) (Max) @ Id 4V @ 110μA
Input Capacitance (Ciss) (Max) @ Vds 10.76pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 80A
Drain-source On Resistance-Max 0.0054Ohm
Pulsed Drain Current-Max (IDM) 320A
DS Breakdown Voltage-Min 55V
Avalanche Energy Rating (Eas) 345 mJ
RoHS Status ROHS3 Compliant
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IPI80N06S3-05 Документы

IPI80N06S3-05 brand manufacturers: Rochester Electronics, LLC, Anli stock, IPI80N06S3-05 reference price.Rochester Electronics, LLC. IPI80N06S3-05 parameters, IPI80N06S3-05 Datasheet PDF and pin diagram description download.You can use the IPI80N06S3-05 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPI80N06S3-05 pin diagram and circuit diagram and usage method of function,IPI80N06S3-05 electronics tutorials.You can download from the Anli.