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IPP80N04S2H4AKSA2 Технические параметры

Rochester Electronics, LLC  IPP80N04S2H4AKSA2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3-1
Current - Continuous Drain (Id) @ 25℃ 80A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 300W Tc
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series OptiMOS™
Свойство продукта Значение свойства
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4.4pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 148nC @ 10V
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
RoHS Status Non-RoHS Compliant
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IPP80N04S2H4AKSA2 Документы

IPP80N04S2H4AKSA2 brand manufacturers: Rochester Electronics, LLC, Anli stock, IPP80N04S2H4AKSA2 reference price.Rochester Electronics, LLC. IPP80N04S2H4AKSA2 parameters, IPP80N04S2H4AKSA2 Datasheet PDF and pin diagram description download.You can use the IPP80N04S2H4AKSA2 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IPP80N04S2H4AKSA2 pin diagram and circuit diagram and usage method of function,IPP80N04S2H4AKSA2 electronics tutorials.You can download from the Anli.