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Rochester Electronics, LLC IRF740B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 10A Tc | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Number of Elements | 1 Element | |
| Power Dissipation (Max) | 134W Tc | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tube | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | MATTE TIN | |
| Terminal Position | SINGLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 540m Ω @ 5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1.8pF @ 25V | |
| Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V | |
| Drain to Source Voltage (Vdss) | 400V | |
| Vgs (Max) | ±30V | |
| JEDEC-95 Code | TO-220AB | |
| Drain Current-Max (Abs) (ID) | 10A | |
| Drain-source On Resistance-Max | 0.54Ohm | |
| Pulsed Drain Current-Max (IDM) | 40A | |
| DS Breakdown Voltage-Min | 400V | |
| Avalanche Energy Rating (Eas) | 450 mJ | |
| RoHS Status | ROHS3 Compliant |