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IRF830 Технические параметры

Rochester Electronics, LLC  IRF830 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 4.5A Tc
Drive Voltage (Max Rds On, Min Rds On) 10V
Number of Elements 1 Element
Power Dissipation (Max) 74W Tc
Operating Temperature -55°C~150°C TJ
Packaging Tube
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Terminal Finish TIN LEAD
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 2.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 610pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Drain to Source Voltage (Vdss) 500V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 4.5A
Pulsed Drain Current-Max (IDM) 18A
DS Breakdown Voltage-Min 500V
RoHS Status ROHS3 Compliant
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IRF830 Документы

IRF830 brand manufacturers: Rochester Electronics, LLC, Anli stock, IRF830 reference price.Rochester Electronics, LLC. IRF830 parameters, IRF830 Datasheet PDF and pin diagram description download.You can use the IRF830 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find IRF830 pin diagram and circuit diagram and usage method of function,IRF830 electronics tutorials.You can download from the Anli.