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KSB601YTU Технические параметры

Rochester Electronics, LLC  KSB601YTU technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Current-Collector (Ic) (Max) 5A
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Свойство продукта Значение свойства
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1.5W
Transistor Type PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 5000 @ 3A 2V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 3mA, 3A
Voltage - Collector Emitter Breakdown (Max) 100V
RoHS Status ROHS3 Compliant

KSB601YTU Документы

KSB601YTU brand manufacturers: Rochester Electronics, LLC, Anli stock, KSB601YTU reference price.Rochester Electronics, LLC. KSB601YTU parameters, KSB601YTU Datasheet PDF and pin diagram description download.You can use the KSB601YTU Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KSB601YTU pin diagram and circuit diagram and usage method of function,KSB601YTU electronics tutorials.You can download from the Anli.