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MBT6429DW1T1 Технические параметры

Rochester Electronics, LLC  MBT6429DW1T1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 200mA
Number of Elements 2 Elements
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Terminal Finish TIN LEAD
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Свойство продукта Значение свойства
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 6
JESD-30 Code R-PDSO-G6
Qualification Status COMMERCIAL
Configuration SEPARATE, 2 ELEMENTS
Power - Max 150mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type 2 NPN (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 500 @ 100μA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Transition Frequency 100MHz
Frequency - Transition 700MHz
RoHS Status Non-RoHS Compliant
Просмотр сходства

MBT6429DW1T1 Документы

MBT6429DW1T1 brand manufacturers: Rochester Electronics, LLC, Anli stock, MBT6429DW1T1 reference price.Rochester Electronics, LLC. MBT6429DW1T1 parameters, MBT6429DW1T1 Datasheet PDF and pin diagram description download.You can use the MBT6429DW1T1 Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find MBT6429DW1T1 pin diagram and circuit diagram and usage method of function,MBT6429DW1T1 electronics tutorials.You can download from the Anli.