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MJE700 Технические параметры
Rochester Electronics, LLC MJE700 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Surface Mount | NO | |
| Package / Case | TO-225AA, TO-126-3 | |
| Mounting Type | Through Hole | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Current-Collector (Ic) (Max) | 4A | |
| Packaging | Bulk | |
| JESD-609 Code | e0 | |
| Pbfree Code | no | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | TIN LEAD | |
| Additional Feature | BUILT IN BIAS RESISTOR | |
| Terminal Position | SINGLE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | 240 | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | COMMERCIAL | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| Power - Max | 40W | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP - Darlington | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A 3V | |
| Current - Collector Cutoff (Max) | 100μA | |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 30mA, 1.5A | |
| Voltage - Collector Emitter Breakdown (Max) | 60V | |
| Transition Frequency | 1MHz | |
| RoHS Status | Non-RoHS Compliant |
MJE700 Документы
- DatasheetsONSMS35968 Datasheet ONSMS19624 Datasheet
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